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DG9421/DG9422
Vishay Siliconix
Precision Low-Voltage, Low-Glitch CMOS Analog Switches
FEATURES
D 2.7- thru 12-V Single Supply or "2.7- thru "6-Dual Supply D Low On-Resistance--rDS(on): 2.0 W @ 12 V D Fast Switching--tON: 28 ns --tOFF: 22 ns D TTL and Low Voltage Logic D Low Leakage: 10 pA (typ) D u2000-V ESD Protection
BENEFITS
D D D D D D High Accuracy High Speed, Low Glitch Single and Dual Supply Capability Low rON in Small TSOP Package Low Leakage Low Power Consumption
APPLICATIONS
D D D D D D Automatic Test Equipment Data Acquisition XDSL and DSLAM PBX Systems Reed Relay Replacement Audio and Video Signal Routing
DESCRIPTION
Using BiCMOS wafer fabrication technology allows the DG9421/DG9422 to operate on single and dual supplies. Designed for optimal performance at single 5 V and dual "5 V, the DG9421/9422 combine low and flat on-resistance (3 W), fast speed (tON = 38 ns) and low charge injection (less than 1 pC) and is well suited for applications where signal switching accuracy, low noise and low distortion is critical.
The DG9421 and DG9422 respond to opposite control logic as shown in the Truth Table.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
TSOP-6
V+ COM v1 2 3 Top View Device Marking: DG9421DV = 4Exxx DG9422DV = 4Fxxx 6 5 4 IN NC/NO GND
Logic
0 1
DG9421
ON OFF Logic "0" v 0.8 V Logic "1" w 2.4 V
DG9422
OFF ON
Switches Shown for Logic "0" Input
ORDERING INFORMATION
-40 to 85_C _ DG9421DV 6-Pin TSOP DG9422DV
Document Number: 70679 S-21424--Rev. C, 26-Aug-02
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DG9421/DG9422
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 TO 13 V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
V a, IN
Power Dissipation (Package)b 6-Pin TSOPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 570 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 7 mW/_C above 25_C
VS, VD . . . . . . . . . -0.3 to (V+ +0.3 V) or 50 mA, whichever occurs first
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Peak Current, S or D (Pulsed 1 ms, 10% Duty Cycle) . . . . . . . . . . . . 100 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150_C
SPECIFICATIONSa (SINGLE SUPPLY 12 V)
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangea Drain-Source On-Resistance Switch Off Leakage Current Channel On Leakage Current VANALOG rDS(on) IS(off) VD = 1/11 V, VS = 11/1 V ID(off) ID(on) VS = VD = 11/1 V V+ = 10.8 V, V- = 0 V IS = 5 mA, VD = 2/9 V Full Room Full Room Full Room Full Room Full -1 -10 -1 -10 -1 -10 0 2.0 12 3 3.4 1 10 1 10 1 10 nA V W
Limits
-40 to 85_C
Symbol
V+ = 12 V, V- = 0 V VIN = 2.4 V, 0.8 Vf
Tempb
Mind
Typc
Maxd
Unit
Digital Control
Input Current, VIN Low Input Current, VIN High IIL IIH VIN Under Test = 0.8 V VIN Under Test = 2.4 V Full Full -1 -1 0.02 0.02 1 1 mA m
Dynamic Characteristics
Turn-On Timee Turn-Off Timee Charge Injectione Off Isolatione Capacitancee tON tOFF Q OIRR CS(off) CD(off) CD(on) f = 1 MHz RL = 300 W , CL = 35 pF VS = 5 V See Figure 2 Vg = 0 V, Rg = 0 W , CL = 1 nF RL = 50 W , CL = 5 pF, f = 1 MHz Room Full Room Full Room Room Room Room Room 20 25 0.8 -60 31 30 71 pF 45 49 47 59 ns
pC dB
Source Off
Drain Off Capacitancee Channel On Capacitancee
Power Supplies
Positive Supply Current Negative Supply Current Ground Current I+ IIGND VIN = 0 or 12 V Room Full Room Full Room Full -1 -5 -1 -5 0.02 -0.002 -0.002 1 5 mA
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Document Number: 70679 S-21424--Rev. C, 26-Aug-02
DG9421/DG9422
Vishay Siliconix
SPECIFICATIONSa (DUAL SUPPLY "5 V)
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) IS(off) Switch Off Leakage Currentg ID(off) Channel On Leakage Currentg ID(on) V+ = 5 V, V- = -5 V IS = 5 mA, VD = "3.5 V V+ = 5.5 V, V- = -5.5 V VD = "4.5 V, VS = #4.5 V V+ = 5.5 V, V- = -5.5 V VS = VD = "4.5 V Full Room Full Room Full Room Full Room Full -1 -10 -1 -10 -1 10 -5 2.2 5 3.2 3.6 1 10 1 10 1 10 nA V W
Limits
-40 to 85_C
Symbol
V+ = 5 V, V- = -5 V VIN = 2.4 V, 0.8 Vf
Tempb
Mind
Typc
Maxd
Unit
Digital Control
Input Current, VIN Lowe Input Current, VIN Highe IIL IIH VIN Under Test = 0.8 V VIN Under Test = 2.4 V Full Full -1 -1 0.02 0.02 1 1 mA m
Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Injectione Off Isolatione Capacitancee tON tOFF Q OIRR CS(off) CD(off) CD(on) f = 1 MHz RL = 300 W , CL = 35 pF VS = "3.5 V See Figure 2 Vg = 0 V, Rg = 0 W , CL = 1 nF RL = 50 W , CL = 5 pF, f = 1 MHz Room Full Room Full Room Room Room Room Room 38 45 0.6 -57 32 31 71 pF 63 68 83 97 ns
pC dB
Source Off
Drain Off Capacitancee Channel On Capacitancee
Power Supplies
Positive Supply Currente Negative Supply Currente Ground Currente I+ IIGND VIN = 0 or 5 V Room Full Room Full Room Full -1 -5 -1 -5 0.03 -0.002 -0.002 1 5 mA
SPECIFICATIONSa (SINGLE SUPPLY 5 V)
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) V+ = 4.5 V, IS = 5 mA VD = 1 V, 3.5 V Full Room Full 0 3.6 5 6.0 6.6 V W
Limits
-40 to 85_C
Symbol
V+ = 5 V, V- = 0 V VIN = 2.4 V, 0.8 Vf
Tempb
Mind
Typc
Maxd
Unit
Dynamic Characteristics
Turn-On Timee Turn-Off Timee Charge Injectione Document Number: 70679 S-21424--Rev. C, 26-Aug-02 tON tOFF Q RL = 300 W , CL = 35 pF VS = 3.5 V, See Figure 2 Vg = 0 V, Rg = 0 W , CL = 1 nF Room Hot Room Hot Room 43 30 0.3 67 74 67 80 ns
pC
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DG9421/DG9422
Vishay Siliconix
SPECIFICATIONSa (SINGLE SUPPLY 5 V)
Test Conditions Unless Specified Parameter Power Supplies
Positive Supply Currente Negative Supply Currente Ground Currente I+ IIGND VIN = 0 or 5 V Room Hot Room Hot Room Hot -1 -5 -1 -5 0.02 -0.002 -0.002 1 5 mA
Limits
-40 to 85_C
Symbol
V+ = 5 V, V- = 0 V VIN = 2.4 V, 0.8 Vf
Tempb
Mind
Typc
Maxd
Unit
SPECIFICATIONSa (SINGLE SUPPLY 3 V)
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) IS(off) Switch Off Leakage Currentg ID(off) Channel On Leakage Currentg ID(on) V+ = 2.7 V, V- = 0 V IS = 5 mA, VD = 0.5, 2.2 V V+ = 3.3 V, V- = 0 V VD = 1, 2 V, VS = 2, 1 V V+ = 3.3 V, V- = 0 V VS = VD = 1, 2 V Full Room Full Room Full Room Full Room Full -1 -10 -1 -10 -1 -10 0 7.3 3 8.8 10.1 1 10 1 10 1 10 nA V W
Limits
-40 to 85_C
Symbol
V+ = 3 V, V- = 0 V VIN = 0.4 Vf
Tempb
Mind
Typc
Maxd
Unit
Digital Control
Input Current, VIN Lowe Input Current, VIN Highe IIL IIH VIN Under Test = 0.4 V VIN Under Test = 2.4 V Full Full -1 -1 0.02 0.02 1 1 mA m
Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Injectione Off Isolatione tON tOFF Q OIRR CS(off) CD(off) CD(on) f = 1 MHz RL = 300 W , CL = 35 pF VS = 1.5 V See Figure 2 Vg = 0 V, Rg = 0 W , CL = 1 nF RL = 50 W , CL = 5 pF, f = 1 MHz Room Full Room Full Room Room Room Room Room 90 32 0.3 -60 35 34 77 pF 110 125 84 99 ns
pC dB
Source Off Capacitancee Drain Off Capacitancee Channel On Capacitancee
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
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Document Number: 70679 S-21424--Rev. C, 26-Aug-02
DG9421/DG9422
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rON vs. VCOM and Supply Voltage
10 T = 25_C IS = 5 mA r ON - On-Resistance ( W ) 8 V+ = 3.0 V 6 V+ = 5.0 V 4 V+ = 10.8 V 2 V+ = 12 V 0 0 2 4 6 8 10 12 VCOM - Analog Voltage (V) 0 0 1 2 3 4 5 VCOM - Analog Voltage (V) r ON - On-Resistance ( W ) 8 A 6 B C 4 B C 2 A = 85_C B = 25_C C = -40_C V+ = 5.0 V A 10 IS = 5 mA V+ = 3.0 V
rON vs. Analog Voltage and Temperature
rON vs. Analog Voltage and Temperature
8 V" = "5 V IS = 5 mA r ON - On-Resistance ( W ) 6 I+ - Supply Current (pA) 1000
Supply Current vs. Temperature
V+ = "5 V VIN = 0 V
4 A 2 A = 85_C B = 25_C C = -40_C 0 -5 -3 -1 1 3 5 Drain Voltage (V) B C
100
10 -60 -40 -20 0 20 40 60 80 100
Temperature (_C)
Supply Current vs. Input Switching Frequency
10 m 100
Leakage Current vs. Temperature
V+ = 5 V V- = 0 V Leakage Current (pA)
1m I+ - Supply Current (A) 100 m 10 m
10
1m 100 n
I(on) I(off)
10 n 10 100 1K 10 K 100 K 1M 10 M
1 -60 -40 -20 0 20 40 60 80 100
Input Switching Frequences (Hz) Document Number: 70679 S-21424--Rev. C, 26-Aug-02
Temperature (_C)
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DG9421/DG9422
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Leakage Current vs. Temperature
100 V+ = "5 V 60 Leakage Current (pA) 10 I(on) Leakage Current (pA) INO(off)/INC(off) ICOM(off) 100 V+ = 5 V V- = 0 V
Leakage vs. Analog Voltage
20
-20 ICOM(on) -60
1 I(off)
0.1 -60 -40 -20 0 20 40 60 80 100
-100 0 1 2 3 4 5 VCOM, VNO, VNC - Analog Voltage (V)
Temperature (_C)
Leakage vs. Analog Voltage
400 m t OFF - Switching Time ( s) 300 200 100 ICOM(on) 0 -100 INO(off)/INC(off) -200 -300 -400 0 2 4 6 8 10 12 VCOM, VNO, VNC - Analog Voltage (V) ICOM(off) 0 -60 V+ = 12 V V- = 0 V 120
Switching Time vs. Temperature and Supply Voltage (DG9421)
100 tON V+ = 3 V 80
Leakage Current (pA)
60 tON V+ = 5 V 40 tOFF V+ = 5 V tOFF V+ = 3 V
t ON
20 tON V+ = 12 V tOFF V+ = 12 V
-40
-20
0
20
40
60
80
100
Temperature (_C)
Insertion Loss, Off Isolation and Crosstalk vs. Frequency
10 0 -10 Loss, OIRR, X TALK (dB) -20 -30 -40 -50 -60 -70 -80 -90 100 K 1M 10 M Frequency (MHz) 100 M 1G 0.0 0 OIRR V T - Switching Threshold (V) V+ = 3 V RL = 50 W 2.0 Loss 2.5
Switching Threshold vs. Supply Voltage
1.5
1.0
0.5
2
4
6
8
10
12
14
V+ - Supplu Voltage (V) Document Number: 70679 S-21424--Rev. C, 26-Aug-02
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DG9421/DG9422
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Charge Injection vs. Analog Voltage
8 6 Q - Charge Injection (pC) 4 V+ = 5 V 2 0 -2 V+ = 3 V -4 -6 -8 -6 -4 -2 0 2 4 6 8 10 12 V = "5 V V+ = 12 V
VCOM - Analog Voltage (V)
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
NC/NO
VVIN Level Shift/ Drive V+ GND COM
V-
FIGURE 1.
TEST CIRCUITS
V+ Logic Input V+ VS S IN GND VRL 300 W CL 35 pF Switch Output VCL (includes fixture and stray capacitance) VO = VS RL RL + rDS(on) Switch Input* Note: 0V tON VO -V S 90% D VO Switch Input* VNC/NO 50% 0V tOFF VS VO tr <5 ns tf <5 ns
90%
Logic input waveform is inverted for switches that have the opposite logic sense control
FIGURE 2. Switching Time
Document Number: 70679 S-21424--Rev. C, 26-Aug-02
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DG9421/DG9422
Vishay Siliconix
TEST CIRCUITS
V+ VO Rg V+ S IN 3V GND VINX VD CL 10 nF OFF ON Q = DVO x CL OFF VO INX OFF ON OFF DVO
Vg
INX dependent on switch configuration Input polarity determined by sense of switch.
FIGURE 3. Charge Injection
V+ C V+ D1 50 W
VS Rg = 50 W 0V, 2.4 V
S1 IN1 S2 NC 0V, 2.4 V IN2 GND VS VO
D2 RL VC
VO
XTALK Isolation = 20 log C = RF bypass
V-
FIGURE 4. Crosstalk
V+
C
V+
V+
VS Rg = 50 W 0V, 2.4 V
S
D
VO
V+
C
IN
RL 50 W GND VC 0 V, 2.4 V IN
S Meter HP4192A Impedance Analyzer or Equivalent C
D VGND Off Isolation = 20 log C = RF Bypass VS VO VV-
FIGURE 5. Off Isolation
FIGURE 6. Source/Drain Capacitances
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Document Number: 70679 S-21424--Rev. C, 26-Aug-02

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